Low-temperature molecular beam epitaxial growth and magnetic properties of Fe-doped (Ga, Fe)Sb and (In, Fe)As

We have systematically studied the effects of growth conditions on epitaxial growth of Fe-doped (Ga, Fe)Sb and (In, Fe)As, such as growth temperature, V/III beam flux ratio, and Fe-doping concentration. Crystalline quality and surface morphology are monitored by reflection high energy electron diffraction during the low-temperature molecular beam epitaxy. By optimizing the growth conditions, both (Ga, Fe)Sb and (In, Fe)As films are successfully grown. Magnetic properties measurement indicates that epitaxial films exhibit ferromagnetism at low temperatures. These results have laid the foundation for the epitaxial growth of (In, Fe)As/(Ga, Fe)Sb double quantum wells which is a potential platform for realizing the quantum anomalous Hall effect.