STM investigation of rhombohedral multilayer graphene
ORAL
Abstract
Rhombohedral multilayer graphene has emerged as a useful platform for studying strongly correlated electronic states and topological phases, including integer and fractional Chern insulating states. Using scanning tunneling microscopy and spectroscopy (STM/S) at 4K, we have investigated the electronic properties of gate-tunable rhombohedral graphene that have different numbers of layers. Comparison of the local density of states signatures for rhombohedral graphene versus bernal graphene allows us to identify the STM/S features associated with different stacking-orders.
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Presenters
Aining Hu
University of California, Berkeley
Authors
Aining Hu
University of California, Berkeley
Bowei Yang
University of California, Berkeley
Boxi Li
University of California, Berkeley
Peking Univ
Dhanvanth Balakrishnan
University of California, Berkeley
Xu Wei
Massachusetts Institute of Technology
Yi-Fan Zhao
University of California, Berkeley
Tonghang Han
Massachusetts Institute of Technology
Kenji Watanabe
National Institute for Materials Science
NIMS
Research Center for Functional Materials, National Institute for Materials Science
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
National Institute of Materials Science
Advanced Materials Laboratory, National Institute for Materials Science
Takashi Taniguchi
National Institute for Materials Science
International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
Advanced Materials Laboratory, National Institute for Materials Science
