Ab initio calculations for DM-electron scattering rates: what level of theory is sufficient? A case study with silicon
ORAL
Abstract
Here, we show a case study on silicon to demonstrate how the expected sensitivity of such a detector varies with level of theory, using traditional Kohn-Sham density functional theory (DFT) calculations and incorporating self-energy corrections as implemented in the GW approximation. We compare results to other state-of-the-art codes and discuss implications for the DM field for detectors based on novel materials.
LA-UR-24-31339, PNNL-SA-205049
*This work was supported by the U.S. DOE NNSA under Contract No. 89233218CNA000001. E.A.P., C. L. and J.-X.Z. acknowledge support by the LANL LDRD Program through project number 20220135DR. S.L.W. acknowledges support from the LANL Director's Postdoctoral Fellowship award 20230782PRD1. This work was supported in part by the Center for Integrated Nanotechnologies, a DOE Office of Science user facility, in partnership with the LANL Institutional Computing Program for computational resources. Additional computations were performed at the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility located at Lawrence Berkeley National Laboratory, operated under Contract No. DE-AC02-05CH11231 using NERSC award ERCAP0020494.
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Publication: https://arxiv.org/abs/2310.00147
Presenters
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Samuel Linton Watkins
- Pacific Northwest National Laboratory (PNNL)