Cryogenic multiplexing and statistical reproducibility of selective area grown semiconductor nanowires

Bottom-up grown III-V materials underpin several emerging quantum technologies, e.g., semiconductor/superconductor hybrids. However, both scale-up difficulty and reproducibility issues have prevented such materials progressing beyond proof-of-principle research devices. We present results addressing both of these concerns using selective area grown (SAG) nanowires. Firstly, we demonstrate large scale integrated SAG nanowire circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG nanowires operating under deep cryogenic conditions. Studying hundreds of transistor-like devices enabled statistically significant measurements of important parameters such as carrier mobility, contact resistance and threshold voltage, while also providing enhanced insights into the role of different scattering mechanisms and highlighting new physics. We demonstrate scale-up potential through simultaneously inducing gate-defined quantum dots in 20 different SAG nanowires using only three shared crossbar gates.