Transport Properties in InSe-Graphene Heterostructures

In van der Waal heterostructures, an atomic layer can endow characteristics to a dissimilar material in close proximity. Here we explore heterostructures consisting of monolayer graphene and few-layer InSe, the latter is a 2D semiconductor with high mobility and strong Rashba spin-orbit coupling. Our electronic transport data reveal evidence of imparted spin-orbit coupling to the graphene in the form of beat patterns in magnetic oscillations, screening effects as the InSe transitions to a metal phase, and that the graphene’s Dirac point seemingly splits into three insulating states of differing energies. This work reveals InSe-graphene heterostructures as a fascinating platform for transport measurement.