Molecular Beam Epitaxy Synthesis of WS<sub>2</sub> Monolayers on Graphitic Substrates
ORAL
Abstract
Monolayer WS2 is a 2D semiconductor with promising applications in future generations of
electronic and optical devices. To date, several methods have successfully demonstrated
preparation of monolayer WS2, including top-down methods such as exfoliation and bottom-up
methods such as chemical vapor deposition. In this work, we report on the Molecular Beam
Epitaxy (MBE) synthesis of monolayer WS2 on graphitic substrates. Furthermore, we use
Scanning Tunneling Microscopy (STM) to provide insight into the growth kinetics, epitaxial
registry with the underlying substrate, formation of grain boundaries, and presence of point
defects.
electronic and optical devices. To date, several methods have successfully demonstrated
preparation of monolayer WS2, including top-down methods such as exfoliation and bottom-up
methods such as chemical vapor deposition. In this work, we report on the Molecular Beam
Epitaxy (MBE) synthesis of monolayer WS2 on graphitic substrates. Furthermore, we use
Scanning Tunneling Microscopy (STM) to provide insight into the growth kinetics, epitaxial
registry with the underlying substrate, formation of grain boundaries, and presence of point
defects.
*This work was supported by National Science Foundation (NSF) through the Center forDynamics and Control of Materials: an NSF Materials Research Science and Engineering Centerunder cooperative agreement nos. DMR-1720595, DMR-2308817, and the US Air Force grantno. FA2386-21-1-4061. Other supports were from the Welch Foundation F-2164 and NSF grantnos. DMR-1808751 and DMR-2219610.
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Presenters
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Andrew Murphy
- University of Texas at Austin