Defects in Wide and Ultrawide Band Gap Materials
FOCUS · MAR-L43 · ID: 3110653
Presentations
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Compensating defects and mechanisms in AlN and AlGaN
ORAL · Invited
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Publication: D. Wickramaratne et al, Phys. Rev. Materials 8, 094602 (2024).
Presenters
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Mary Ellen Zvanut
- University of Alabama at Birmingham
Authors
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Mary Ellen Zvanut
- University of Alabama at Birmingham
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Shafiqul I Mollik
- UNIVERSITY OF ALABAMA AT BIRMINGHAM
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Jason I Forbus
- University of Alabama at Birmingham
- UNIVERSITY OF ALABAMA AT BIRMINGHAM
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Nonradiative Quenching of the Neutral Donor in Ge-doped AlGaN: Evidence for DX-center Formation
ORAL
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Presenters
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Jason I Forbus
- University of Alabama at Birmingham
- UNIVERSITY OF ALABAMA AT BIRMINGHAM
Authors
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Jason I Forbus
- University of Alabama at Birmingham
- UNIVERSITY OF ALABAMA AT BIRMINGHAM
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Mary Ellen Zvanut
- University of Alabama at Birmingham
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Impact of Aluminum Content on Neutral Donor States in Undoped Bulk AlN and Si-doped AlGaN Investigated by EPR
ORAL
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Publication: Impact of Aluminum Content on Neutral Donor States in Undoped Bulk AlN and Si-doped AlGaN Investigated by EPR (Planned paper)
Presenters
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Md Shafiqul Islam Mollik
- University of Alabama at Birmingham, AL, USA
Authors
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Md Shafiqul Islam Mollik
- University of Alabama at Birmingham, AL, USA
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Jackson P Hanle
- University of Alabama at Birmingham, AL, USA
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Mary Ellen Zvanut
- University of Alabama at Birmingham
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Abstract Withdrawn
ORAL · Withdrawn
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Symmetric Injection of Electrons and Holes in III-Nitrides LEDs through Point Defect Engineering: Ab Initio Nonadiabatic Molecular Dynamics Study
ORAL
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Publication: Solving the Asymmetric Carriers Injection in III-Nitrides LEDs by Point Defect Engineering: Ab Initio Nonadiabatic Molecular Dynamics Study (planned)
Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in III-Nitrides (planned)
Enhancing Carrier Injection Symmetry in InN/GaN Quantum Wells through Point Defect Engineering: Accelerated Hot Electron Cooling via Ab Initio Insights (planned)Presenters
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Yuxin Yang
- The University of Chinese Academy of Sciences (UCAS)
Authors
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Yuxin Yang
- The University of Chinese Academy of Sciences (UCAS)
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Zhiming Shi
- CIOMP, University of Chinese Academy of Sciences
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Dabing Li
- CIOMP, University of Chinese Academy of Sciences
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Xiaojuan Sun
- CIOMP, University of Chinese Academy of Sciences
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Suhuai Wei
- Eastern Institute of Technology, Ningbo
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Abstract Withdrawn
ORAL · Invited · Withdrawn
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Oral: Unraveling the transformation pathway of the β to γ phase transition in Ga<sub>2</sub>O<sub>3</sub> from atomistic simulations
ORAL
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Presenters
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Channyung Lee
- University of Illinois Urbana-Champaign
- University of Illinois at Urbana-Champaign
Authors
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Channyung Lee
- University of Illinois Urbana-Champaign
- University of Illinois at Urbana-Champaign
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Mike Scarpulla
- The University of Utah
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Joel Basile Varley
- Lawrence Livermore National Laboratory
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Elif Ertekin
- University of Illinois at Urbana-Champaign
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2D small hole polarons in Ga<sub>2</sub>O<sub>3</sub> nanolayers
ORAL
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Presenters
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Hartwin Peelaers
- University of Kansas
Authors
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Hartwin Peelaers
- University of Kansas
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Joel Basile Varley
- Lawrence Livermore National Laboratory
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Chris G Van de Walle
- University of California, Santa Barbara
- Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Radiation-induced anion-vacancy dynamics in wide-band-gap semiconductors for power devices.
ORAL
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Presenters
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Haardik Pandey
- Department of Physics and Astronomy, Vanderbilt University
Authors
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Haardik Pandey
- Department of Physics and Astronomy, Vanderbilt University
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Grant Mark Mayberry
- Department of Physics and Astronomy, Vanderbilt University
- Vanderbilt University
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Demos Negash
- Vanderbilt University
- Department of Physics and Astronomy, Vanderbilt University
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Dennis R Ball
- Department of Electrical and Computer Engineering, Vanderbilt University
- Vanderbilt University
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Ronald D Schrimpf
- Department of Electrical and Computer Engineering, Vanderbilt University
- Vanderbilt University
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Daniel M Fleetwood
- Department of Electrical and Computer Engineering, Vanderbilt University
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Sokrates T Pantelides
- Vanderbilt University
- Department of Physics and Astronomy, Vanderbilt University
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SiC, diamond, GaN semiconductor investigation as potential radiator for Čerenkov detector.
ORAL
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Presenters
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Yamina Bennour
- Facility for Rare Isotope Beams
Authors
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Yamina Bennour
- Facility for Rare Isotope Beams
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Jacques Botsoa
- CNRS Orléans
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Nicole Doumit
- ISEP Orléans
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Paul Gueye
- Michigan State University (FRIB)
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Emily Holman
- Michigan State University
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Esidor Ntsoenzok
- CNRS Orléans
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First-principles investigation of donor-acceptor pairs in proximity of silicon carbide surfaces
ORAL
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Publication: Bilgin, A. et al. Donor-acceptor pairs in wide-bandgap semiconductors for quantum technology applications. npj Comput. Mater. (2024)
Presenters
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Anil Bilgin
- University of Chicago
Authors
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Anil Bilgin
- University of Chicago
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Ian Newton Hammock
- University of Chicago
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Hannes Bernien
- UChicago
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Alexander A High
- The University of Chicago
- University of Chicago
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Giulia Galli
- University of Chicago
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