Enhancing Large-Scale Ferroelectric-FET Performance with HZO and MoS2-Based Non-volatile Devices for Neuromorphic Non-Volatile Memory Devices

HZO (Hf0.5Zr0.5O2)-based ferroelectric devices have gained attention due to their low power consumption, fast switching speeds, and improved data retention. These properties make them suitable for applications requiring high charge storage density, such as non-volatile memory devices, with excellent endurance for repeated switching cycles. In this study, we fabricated 10-nm-thick ferroelectric HZO thin films as a dielectric, combined with MoS2 TMDS films as a semiconductor. The ferroelectric properties of HZO were enhanced through stoichiometry control and post-metal annealing, resulting in an orthorhombic phase. We synthesized large-scale 3D-HZO and 2D-MoS2 films for FE-FETs using a wet transfer method, preserving MoS2 from degradation. PFM amplitude, phase, P-E, and C-V curves confirmed the presence of spontaneous remanent polarization in HZO. Finally, we fabricated large-scale HZO/MoS2 FE-FETs for neuromorphic non-volatile memory devices. These devices exhibited 2V hysteresis windows with DC voltage sweeps from –2 to +2V and a high on/off current ratio of ~10^6, making them promising for advanced memory applications.