Multi-emitter cavity quantum electrodynamics with silicon carbide spin qubits

Silicon carbide has emerged as a promising quantum photonic platform for applications in quantum simulation and quantum networking. Recent progress in thin film 4H-silicon carbide-on-insulator fabrication has enabled high quality nanophotonic structures with cavity quality factors exceeding one million. Moreover, silicon carbide (SiC) hosts color centers, such as the silicon vacancy (VSi), which exhibit coherent optical transitions, long-lived spin states and tunability via external electric fields.



In this talk, I will present our progress towards scaling the number of interacting qubits (VSi) by integrating them into high-Q silicon-carbide cavities. Using two-photon correlation measurements on a multimode whispering gallery mode resonator with VSi, we observe evidence of photon-mediated interactions between multiple color centers. Furthermore, we combine the intrinsic nonlinearity in SiC with our cavity quantum electrodynamics (QED) system, by showing interactions between the color centers and photons created from a parametric pair generation process. Finally, I will discuss efforts towards deterministic placement of color centers, stabilization and spin-qubit control, which are critical for engineering multi-qubit entangled states for applications in quantum simulation.