Modeling non-local transport measurements of a quantum anomalous Hall insulator
ORAL
Abstract
The quantum anomalous Hall (QAH) effect, characterized by a quantized Hall resistance at zero magnetic field, has been found in magnetically-doped topological insulators topological insulators such as Cr-doped (Bi,Sb)2Te3. A resistance standard based on the QAH effect promises to change the way we disseminate electrical standards by allowing the integration of quantum resistance and voltage standards into a single cryostat. Efforts to model the transport behavior of QAH insulators, particularly as quantization breaks down, have led to two main approaches: (i) a bulk conductivity model which treats the charge transport properties with a uniform bulk conductivity model and (ii) an edge-only model which considers a combination of chiral and dissipative quasihelical edge states as the transport channels. Both models can predict various features of the transport behavior of QAH insulators - at least qualitatively. A direct comparison of these models with conventional and non-local experimental resistance measurements is made in an effort to highlight features that are not well described. We discuss how QAH models could be improved.
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Presenters
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Valery Ortiz Jimenez
- Physical Measurement Laboratory, National Institute of Standards and Technology
- National Institute of Standards and Technology (NIST)