Mapping topological and magnetic transitions in semiconductor moiré materials

ORAL  · Invited

Abstract

Semiconductor moiré lattices provide a flexible platform to study flat, topological bands which host a variety of closely competing correlated states. In this talk, I will present single-electron transistor microscopy of WSe2 bilayers at low twist angles, where interaction effects are most prominent. At zero magnetic field, we observe a series of quantum anomalous Hall states and demonstrate topological phase transitions as a function of twist angle and electric field. We also investigate the Hofstadter regime at high magnetic field, where we resolve a cascade of magnetic phase transitions due to crossing Hofstadter and moiré bands of differing spin. I will discuss which experimental tuning knobs are most influential in determining the preferred ground states and symmetry breaking within different physical regimes.

*Experimental work was supported by the Department of Energy, Office of Basic Energy Sciences, award number DE-SC0023109 and the National Science Foundation, Division of Materials Research award number 2237050. The work at Massachusetts Institute of Technology was supported by the Air Force Office of Scientific Research (AFOSR) under award FA9550-22-1-0432.

Presenters

  • Ben E Feldman

    • Stanford University

Authors

  • Ben E Feldman

    • Stanford University