Viscous terahertz photoconductivity of hydrodynamic electrons in graphene

ORAL

Abstract

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the bandgap enhances the number of charge carriers participating in transport. In superconductors and normal metals, the photoresistance is positive because of the destruction of the superconducting state and enhanced momentum-relaxing scattering, respectively. Here we report a qualitative deviation from the standard behaviour in doped metallic graphene. We show that Dirac electrons exposed to continuous-wave terahertz (THz) radiation can be thermally decoupled from the lattice, which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyse the dependencies of the negative photoresistance on the carrier density, and the radiation power, and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer, in principle, a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.

Publication: Kravtsov, M., Shilov, A.L., Yang, Y. et al. Viscous terahertz photoconductivity of hydrodynamic electrons in graphene. Nat. Nanotechnol. (2024). https://doi-org.libproxy1.nus.edu.sg/10.1038/s41565-024-01795-y

Presenters

  • Mikhail Kravtsov

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.

Authors

  • Mikhail Kravtsov

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.
  • Artur Shilov

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.
  • Yaping Yang

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.
  • Timur Pryadilin

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.
  • Mikhail Kaschenko

    • Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
  • Olga Popova

    • Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
  • Maria Titova

    • Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
  • Daniil Voropaev

    • Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
  • Yibo Wang

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.
  • Kirill Shein

    • National Research University Higher School of Economics, Moscow, Russia
  • Igor Gayduchenko

    • National Research University Higher School of Economics, Moscow, Russia
  • Mikhail Lukianov

    • Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
  • Gregory Goltsman

    • National Research University Higher School of Economics, Moscow, Russia
  • Andrei Kudrishov

    • Department of Materials Science and Engineering, National University of Singapore, Singapore.
  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Dmitry Svintsov

    • Moscow Center for Advanced Studies, Moscow, Russia
  • Adam Shaffique

    • Department of Physics, Washington University in St. Louis, St. Louis, MO, USA
  • Kostya S Novoselov

    • Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
    • National University of Singapore
  • Alessandro Principi

    • School of Physics and Astronomy, University of Manchester, Manchester, UK
    • University of Manchester
  • Denis Bandurin

    • Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore