Stoichiometric control of electrical transport properties in LaAlO<sub>3</sub>-SrTiO<sub>3</sub> interfaces

ORAL

Abstract

SrTiO3-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO3/SrTiO3 interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. By exploiting small variations of the La/Al chemical ratio we can fine-tune systematically the carrier density, mobility and the formation of the superconducting condensate. Interestingly, we find a region in the phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with predictions from Bardeen–Cooper–Schrieffer theory. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems.

*We acknowledge QuantERA ERA-NET Cofund in Quantum Technologies (Grant Agreement N. 731473) implemented within the European Union's Horizon 2020 Program (QUANTOX) and support from the Swedish infrastructure for micro- and nanofabrication - MyFab.

Presenters

  • Alexei Kalabukhov

    • Chalmers University of Technology

Authors

  • Alexei Kalabukhov

    • Chalmers University of Technology
  • Gyanendra Singh

    • Institut de Ciencia de Materials de Barcelona
  • Roger Guzman

    • School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
  • Guilhem Saiz

    • Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, France
  • Wu Zhou

    • School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
  • Jaume Gazquez

    • Institut de Ciencia de Materials de Barcelona
    • Institute for Materials Science of Barcelona ICMAB-CSIC
  • Fereshteh Masoudinia

    • Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193, Bellaterra, Catalonia, Spain
  • Dag Winkler

    • Department of Microtechnology and Nanoscience - MC2, Chalmers University of Technology, SE 412 96, Gothenburg, Sweden
  • Tord C Claeson

    • Chalmers Univ of Tech
  • Jordi Fraxedas

    • Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
  • Nicolas Bergeal

    • Yale University
  • Gervasi Herranz

    • Consejo Superior de Investigaciones Cientificas (CSIC)
    • Institute for Materials Science of Barcelona ICMAB-CSIC