Control of antiferromagnetic domain wall at ferrimagnet interface using magnetic spin Hall effect

Electrical control of antiferromagnetic textures is essential to exploit the antiferromagnetic properties beneficial for spintronic devices, such as high speed and field immunity. However, such control is difficult to achieve also due to inherent field immunity and limited methods to generate antiferromagnetic texture. Here, we demonstrate the generation and manipulation of an antiferromagnetic domain wall in a bilayer composed of under- and over-compensated ferrimagnets. We first confirm the spontaneous formation of an antiferromagnetic domain wall at the interface by temperature and magnetic field depedent transport measurements. Furthermore, we show that this domain wall can be electrically controlled using the magnetic spin Hall effect (MSHE) [1], where an out-of-plane polarized spin current is generated by the in-plane current. This work offers a novel approach to utilize compensated ferrimagnets as a platform for studying antiferromagnetic spintronics, providing insights for next-generation spintronic devices that can function as a three-dimensional stack-based memory [2,3].

[1] M. Kimata et al., Nature 565, 627–630 (2019)

[2] R. Lavrijsen et al., Nature 493, 647 (2013)

[3] Y.M. Hung et al., J. Magn. Soc. Jpn. 45, 6 (2021)