Ni-DNA-based thin-film memristor development

ORAL

Abstract

DNA is a natural one-dimensional nanowire, but its low conductivity limits its application in nanodevices. By chelating divalent metals, such as nickel (Ni), a Ni ion containing DNA (Ni-DNA) is formed. In our previous studies indicated that Ni-DNA is a conductive nanowire which has memristor and memcapacitor properties. In this study, we have developed a flexible gold nano-thin-film (NTF) device by plasma sputtering technique that allows Ni-DNA to form a self-assembly monolayer on gold NTF via Au-thiol linkage. Furthermore, the Ni-DNA NTF devices demonstrate memristor behavior and multiple memory states can be demonstrated by applying variant external bias from 3.5V to 1.5V. This controllable multistate memory states can be used for mem-computing in the near future.

*This study was supported in part by National Science and Theoretical Council of Taiwan (Grant numbers: NSTC 113R010338 and NSTC 112-2112-M-A49-003).

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Presenters

  • Yu-Shan Tien

    • National Yang Ming Chiao Tung University

Authors

  • Yu-Shan Tien

    • National Yang Ming Chiao Tung University

  • Yu-Chun Lin

    • National Yang Ming Chiao Tung University

  • Kuan-Cheng Lu

    • National Yang Ming Chiao Tung University

  • Chia-Yu Chang

    • Department of Biological Science and Technology, National Yang Ming Chiao Tung University, Hsinchu 30068, Taiwan, ROC
    • Department of Biological Science and Technology, National Yang Ming Chiao Tung University
    • National Yang Ming Chiao Tung University

  • Wen-Bin Jian

    • National Yang Ming Chiao Tung University

  • Yu-Chang Chen

    • National Yang Ming Chiao Tung University

  • Chia-Ching Chang

    • National Yang Ming Chiao Tung University
    • Department of Biological Science and Technology, National Yang Ming Chiao Tung University