Simulation Guided Semiconductor Quantum Dot Device Design for Fast Read-Out

Many considerations must be taken to design and fabricate quantum dot devices on semiconductors. One aspect of interest for designs arises from the desire to achieve faster readout of quantum dot states than is conventionally available with quantum point contacts or single electron transistors. This can be achieved by incorporating a high quality factor resonator on the device which couples to the quantum dots [1]. Challenges arise from this attempt in that the lever arm of gates that control the quantum dots must be large to achieve a sufficiently strong dispersive shift signal [1,2]. We present results of modeling our device designs using numerical simulations of the device structure through a self consistent solution of the Poisson-Schrödinger coupled equations [3]. Key features of such systems can be extracted with this simulation, of primary interest the lever arms of the gates [3,4]. We use this as a guide to alter our device design before fabrication and compare experimental results with these numerical methods to show their utility in experiments.