Anomalously Enhanced Diffusivity of Moiré Excitons via Manipulating the Interplay with Correlated Electrons

ORAL

Abstract

In angle-aligned WS₂/WSe₂ heterobilayers, the interplay between excitons and correlated electrons within the moiré superlattice provides an intriguing platform for actively manipulating the exciton dynamics. Utilizing spatially resolved PL imaging, we systematically study the diffusion of interlayer excitons as a function of doping. Our measurements reveal that exciton diffusivity is highly sensitive to electron density, showing a pronounced enhancement as doping increases when carriers are in Fermi liquid states. However, at fractional fillings, where correlated electrons form generalized Wigner crystals, exciton diffusivity is suppressed. Notably, near the Mott insulator state, we observe orders of magnitude increase in exciton diffusivity. The enhanced diffusivity is more pronounced in 0-degree aligned heterobilayers compared to 60-degree aligned ones, due to the unique spatial localization of interlayer excitons associated with stacking types. Our study demonstrates the exciting opportunities of using correlated electrons to control the moiré excitons for exploring quantum phenomena and excitonic devices.

*This work was supported by NSF Career Grants DMR-1945420, DMR-2104902, ECCS-2139692, and NSF under awards DMR-2104805 and DMR-2145735.

Publication: Yan, Li, et al. "Anomalously Enhanced Diffusivity of Moire' Excitons via Manipulating the Interplay with Correlated Electrons." arXiv preprint arXiv:2410.11734 (2024).

Presenters

  • Li Yan

    • Rensselaer Polytechnic Institute
    • Carnegie Mellon University / Rensselaer Polytechnic Institute

Authors

  • Li Yan

    • Rensselaer Polytechnic Institute
    • Carnegie Mellon University / Rensselaer Polytechnic Institute
  • Lei Ma

    • Rensselaer Polytechnic Institute
    • Carnegie Mellon University / Rensselaer Polytechnic Institute
  • Yuze Meng

    • Rensselaer Polytechnic Institute
    • Carnegie Mellon University
    • Carnegie Mellon University / Rensselaer Polytechnic Institute
  • Chengxin Xiao

    • Physical Society of Hong Kong
  • Bo Chen

    • CARNEGIE MELLON UNIVERSITY
  • Qiran Wu

    • University of California, Riverside
  • Jingyuan Cui

    • University of California, Riverside
  • Rounak Banerjee

    • Arizona State University
  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Sefaattin Tongay

    • Arizona State University
  • Benjamin M Hunt

    • Carnegie Mellon University
  • Qingrui Cao

    • Carnegie Mellon University
  • Yongtao Cui

    • University of California, Riverside
  • Wang Yao

    • The University of Hong Kong
  • Sufei Shi

    • Rensselaer Polytechnic Institute
    • Carnegie Mellon University