Antiferroelectric behaviors and the role of oxygen migration on fatigue in ZrO<sub>2</sub> films

ORAL

Abstract

HfO2- and ZrO2-based films exhibiting double hysteresis loops are touted as candidates for next-generation, lead-free energy-efficient devices. Understanding of the origin of double hysteresis in ZrO2 and of the role of oxygen vacancies in wake-up and fatigue processes, however, have remained elusive. Here, epitaxial single-phase ZrO2 thin films showing double hysteresis is demonstrated and its mechanism presented. High-resolution scanning transmission electron microscopy, electrical characterization, and density functional theoretical calculations reveal the roles of structural phases and oxygen redistribution in the fatigue process.

*The authors acknowledge support from the Army Research Laboratory via the Collaborative for Hierarchical Agile and Responsive Materials (CHARM) under cooperative agreement W911NF- 19-2-0119. J.E.S and L.W.M acknowledge support from the Army Research Office under W911NF-21-1-0126. This work made use of the MIT.nano Characterization Facilities.

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Presenters

  • Yu Yun

    • Drexel University

Authors

  • Jonathan E Spanier

    • Drexel University

  • Michael Xu

    • MIT

  • songsong zhou

    • University of Pennsylvania

  • Liyan Wu

    • Drexel University

  • Brendan M Hanrahan

    • Army Research Laboratory

  • Lane W Martin

    • Rice University

  • James M LeBeau

    • Massachusetts Institute of Technology

  • Andrew Marshall Rappe

    • University of Pennsylvania

  • Yu Yun

    • Drexel University