Topological surface state dominated nonlinear Hall effect and microwave rectification at room temperature

POSTER

Abstract

Nonlinear Hall effect(NLHE) as a recently discovered phenomenon, offers a unique perspective into the symmetry and exotic topological properties of quantum materials, enabling new avenues for optoelectronic devices. We uncovered that the NLHE in a 3D topological insulator Bi2Te3, primarily attributed to skew scattering, is significantly influenced by its intrinsic topological surface state (TSS). We demonstrate room-temperature microwave rectification spanning from 0.01 to 16 GHz in 30 nm films and bulk crystals.

*The research is supported by the Ministry of Science and Technology of China (Grants No. 2019YFA0308600, 2020YFA0309000), the National Natural Science Foundation of China (Grants No.12474121), the Innovation program for Quantum Science and Technology (Grant No. 2021ZD0302500) and the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01).

Presenters

  • Qia Shen

    • Shanghai Jiao Tong university

Authors

  • Qia Shen

    • Shanghai Jiao Tong university