Diode integrated telecom silicon color centers for quantum networking

Electrical-device integration of solid-state spin-defects is crucial for scalable quantum technologies. Telecom color centers in silicon have recently emerged as new platforms of interest due to their promise of becoming an efficient and scalable spin-photon interface for quantum communication. We investigated the optical and electrical properties of ensembles of T and G center in Silicon through their integration within lateral electrical diodes. This addition of a novel control dimension has allowed us to observe electrical luminescence and anomalous oscillatory behavior of the T center, and Stark tuning and charge state destabilization of the G center.[1] Our findings demonstrate the unique advantages and insights offered by the integration of these color centers within electrical diodes that reveal details of the color center behavior, and as well allows electrical control over their optical properties. Such control can prove to be valuable for color centers incorporated into quantum networks.