N-type doping of organic semiconductors based on air stable photocatalyst

ORAL

Abstract

N-type doping for organic semiconductors is challenging due to the poor stability of the doped organic semiconductor and low doping efficiency. Successful n-type doping examples with good doping efficiency and high conductivity are very limited. Here we introduce a new concept, photoredox catalyst-based n-typed doping, where the photoredox catalyst – when excited by the light – can be used to generate oxidants, or reductants to achieve either p-type doping or n-type doping. We will present our research on photocatalyst-based n-type doping of various conjugated organic semiconductors. A range of polymers, featuring diverse side chains and backbones, were investigated. Successful n-type doping was achieved, demonstrating that different energy level alignments can significantly influence photocatalyst-driven doping results. Additionally, ion exchange was found to have a substantial impact on the efficiency of photocatalyst based n-type doping.

*MURI Award N00014-23-1-2001NSF Award ECCS-2025064

Presenters

  • Liang Yan

    • University of North Carolina at Chapel Hill

Authors

  • Liang Yan

    • University of North Carolina at Chapel Hill
  • Xinzheng Yang

    • University of Washington
  • Mengqi Yang

    • University of Washington
  • Justin Neu

    • University of North Carolina at Chapel Hill
  • Somayeh Kashani

    • North Carolina State University
  • Rajiv Giridharagopal

    • University of Washington
  • Yusuf Olanrewaju

    • North Carolina State University
  • Franky So

    • North Coralina State University
  • David S Ginger

    • University of Washington
  • Harald W Ade

    • North Carolina State University
  • Xiaosong Li

    • University of Washington
  • Wei You

    • University of North Carolina at Chapel Hill