Experiment Investigation of Photo-Assisted Tunneling in a 2D Magnet-Semiconductor Tunnel Junction
ORAL
Abstract
A magnetic tunnel junction consists of two magnetic layers separated by a thin tunnel barrier and features significant magneto-tunneling resistance that depends on the alignment of spins in the magnetic layers. We introduce a novel device structure made from a monolayer semiconductor and a 2D magnetic metal Fe₃GeTe₂ with a BN tunnel barrier. This device leverages both the magnetization of the 2D magnet and light polarization to control tunneling resistance.
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Publication: This work is supported by AFOSR grant FA9550-21-1-0319 and ACS PRF# 66299-DNI10.
Presenters
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Mohamed Shehabeldin
- Boston College