First-principles prediction of clamping-enhanced electromechanical responses in known and novel antiferroelectrics
ORAL
Abstract
Substrate clamping is known to suppress electromechanical responses in thin-film ferroelectrics, which poses a significant challenge for the miniaturization of piezoelectric devices. However, recent experimental and theoretical work has shown that substrate clamping can unexpectedly enhance out-of-plane strains in the thin-film antiferroelectrics PbZrO3 and PbHfO3. Here we use density functional theory calculations to demonstrate that this enhancement is achievable in a wide variety of antiferroelectrics (perovskite-structured and otherwise) with the appropriate epitaxial orientation. From a selection of antiferroelectric candidates obtained from a high-throughput screening of the Materials Project database, we identify several materials with promising electromechanical responses.
*We acknowledge support from the U.S. Department of Energy Office of Science under contract no. DE-AC02-05CH11231 (Materials Project program KC23MP). This research utilized computational resources from the National Energy Research Scientific Computing Center, a U.S. Department of Energy Office of Science User Facility located at Lawrence Berkeley National Laboratory.
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Presenters
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Ella Banyas
- Dept. of Physics, University of California, Berkeley; Materials Sciences Division, Lawrence Berkeley National Laboratory