P-I-N diode-integrated Silicon T centers
ORAL
Abstract
Spin-defects which naturally emit in the low-loss transmission window of telecommunication-band optical fiber and are semiconductor-hosted are particularly desirable for engineering large networks of optically-connected quantum systems to distribute entanglement. Notably, the T center is a carbon-related defect in silicon with a ground-state spin and an O-band (1326 nm) optical transition. Existing work on the T center has focused on characterizing its properties in bulk material, and addressing nanophotonic integration for enhancement of the optical transition. However, electrical devices are a crucial tool for tuning and stabilization of network nodes. Recently, the silicon G center was electrical-device integrated to enable Stark tuning and charge state manipulation, however diode-integration of the T center had yet to be demonstrated. Here we confine a small ensemble of T centers to the center of a lithographically-defined ion-doped lateral PIN diode. We observe defect electroluminescence, utilize the diode to probe the defect emission mechanisms, and uncover unexpected oscillatory behavior. Our work offers insight in the behavior of the T center, and opens new questions in defect-device interactions.
*This work was supported by AWS Center for Quantum Networking and the Harvard Quantum Initiative. Portions of this work were performed at the Harvard University Center for Nanoscale Systems (CNS); a member of the National Nanotechnology Coordinated Infrastructure Network (NNCI), which is supported by the National Science Foundation under NSF award no. ECCS-2025158. M.S. acknowledges funding from a NASA Space Technology Graduate Research Fellowship.
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Publication: A. M. Day et. al, Manuscript in Preparation.
Presenters
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Aaron M Day
- Harvard University