Improving the understanding of moiré spatial structure and electronic transport properties

ORAL

Abstract

Over the last half decade, electrical transport studies of Van der Waals moiré superlattices have revealed rich correlated and topological phenomena. However, the actual spatial structure of the superlattice which give rise to the electronic properties are still not well understood as electrical transport averages over local inhomogeneities between contact pairs. Scanning probe techniques are popular, nondestructive ways to directly visualize the real space structure of moirés. In this talk I will describe progress in using the recently developed torsional force microscopy, an atomic force microscope (AFM) based technique, to provide complimentary spatial structure information to electrical transport. I will highlight challenges in extracting quantitative structural information from AFM images and describe a protocol which overcomes these challenges to get accurate determination of local twist angle and strain. If time permits, I will show preliminary results of electrical transport through regions of a twisted bilayer graphene superlattice with pre-characterized spatial structure.

*Sample preparation, measurements, and analysis were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-76SF00515.

Presenters

  • Steven Tran

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University

Authors

  • Steven Tran

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Jan-Lucas Uslu

    • JARA-FIT and 2nd Institute of Physics, RWTH Aachen University
  • Mihir Pendharkar

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Chaitrali Duse

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Qingrui Cao

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Aaron L Sharpe

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Joe Finney

    • Stanford University
    • Stanford Univ
  • Marisa Hocking

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Nathan J Bittner

    • Independent Researcher
  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science
  • Marc Kastner

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • Andrew J Mannix

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
  • David Goldhaber-Gordon

    • Stanford Institute for Materials & Energy Sciences, Stanford University
    • Stanford University
    • Department of Physics, Stanford University