Improving the understanding of moiré spatial structure and electronic transport properties
ORAL
Abstract
Over the last half decade, electrical transport studies of Van der Waals moiré superlattices have revealed rich correlated and topological phenomena. However, the actual spatial structure of the superlattice which give rise to the electronic properties are still not well understood as electrical transport averages over local inhomogeneities between contact pairs. Scanning probe techniques are popular, nondestructive ways to directly visualize the real space structure of moirés. In this talk I will describe progress in using the recently developed torsional force microscopy, an atomic force microscope (AFM) based technique, to provide complimentary spatial structure information to electrical transport. I will highlight challenges in extracting quantitative structural information from AFM images and describe a protocol which overcomes these challenges to get accurate determination of local twist angle and strain. If time permits, I will show preliminary results of electrical transport through regions of a twisted bilayer graphene superlattice with pre-characterized spatial structure.
*Sample preparation, measurements, and analysis were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-76SF00515.
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Presenters
Steven Tran
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Authors
Steven Tran
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Jan-Lucas Uslu
JARA-FIT and 2nd Institute of Physics, RWTH Aachen University
Mihir Pendharkar
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Chaitrali Duse
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Qingrui Cao
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Aaron L Sharpe
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Joe Finney
Stanford University
Stanford Univ
Marisa Hocking
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Nathan J Bittner
Independent Researcher
Takashi Taniguchi
National Institute for Materials Science
International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
Advanced Materials Laboratory, National Institute for Materials Science
Kenji Watanabe
National Institute for Materials Science
NIMS
Research Center for Functional Materials, National Institute for Materials Science
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
National Institute of Materials Science
Advanced Materials Laboratory, National Institute for Materials Science
Marc Kastner
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
Andrew J Mannix
Stanford Institute for Materials & Energy Sciences, Stanford University
Stanford University
David Goldhaber-Gordon
Stanford Institute for Materials & Energy Sciences, Stanford University