Alkali-metal vacancy defects in silicon for telecom emitters

ORAL

Abstract

Silicon is a technologically mature material which makes it an excellent host for quantum defects with integrated quantum technology applications. Several point defects were theoretically investigated in this platform, while single photon emitters and spin-photon interface defects were demonstrated experimentally. We apply first-principles calculations on alkali-metal-saturated vacancy complexes in search of a combination of telecom-wavelength emission with ground-state spin properties for quantum repeater and distributed sensing applications. Based on the localization effect of the defect orbitals, we propose the positively charged sodium variant of the experimentally known Q-center in silicon as a promising candidate.

*We gratefully acknowledge funding under NSF Awards # 2137828 and # 2246394. This research used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 and Award No. BES-ERCAP0029123.

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Publication: https://arxiv.org/abs/2409.10746

Presenters

  • Péter Udvarhelyi

    • University of California, Los Angeles

Authors

  • Péter Udvarhelyi

    • University of California, Los Angeles

  • Prineha Narang

    • University of California, Los Angeles