Lattice thermal conductivity of ZnO: experimental and theoretical studies
ORAL
Abstract
ZnO has been explored using different approaches such as doping, nanostructuring, 2D confinement, and interface effects to improve thermoelectric performance and lower thermal conductivity. Herein, the lattice thermal conductivity (κL) of ZnO determined from Raman thermometry, the 3ω-method and simulation using three-phonon scattering is presented. The average Debye temperature (θD) of A1(TO) and E2(high) modes estimated utilizing bond-order–length–strength correlation with local bond averaging effects is ∼422 K. The average κL of ZnO calculated using the theoretical coefficient of Slack's equation, θD, and Grüneisen parameter (γ) in Slack's equation is 2.75 W m−1 K−1, which is significantly lower than the κL ∼ 50.9 W m−1 K−1 simulated by considering the Perdew–Burke–Ernzerhof functional with Hubbard and non-analytical corrections. The coefficient of Slack's equation is determined from the κL ∼ 31 W m−1 K−1 of ZnO measured using the 3ω-method to estimate the κL accurately. The experimental coefficient of Slack's equation with Raman thermometry data yields κL ∼ 50.6 W m−1 K−1, which is higher than the value obtained using the 3ω-method but consistent with the theoretical value. Thus, three-phonon anharmonicity describes the κL of ZnO associated with Raman scattering. The method adopted to calculate κL will help for the in-depth analysis of phonon dynamics and the design of wurtzite-ZnO-related power electronics.
*We want to acknowledge the use of the computing resources at the High-Performance Computing Environment, IIT Madras and DAE-BRNS (project no. 37(3)/14/18/2015) for the financial support to set up the transport measurement facility. We thank the Department of Science and Technology India for PPMS funding under the FIST Phase II (SR/FST/PSII-038/2016).
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Publication: Lattice thermal conductivity of ZnO: experimental and theoretical studies
doi:https://doi.org/10.1039/D4CP00575A
Presenters
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Satyasiban Dash
- indian institute of Technology Madras