Characterization of Halide Perovskite Crystals Grown via the Bridgman Method for Alpha and Gamma Radiation Detection

Halide perovskites have emerged as promising materials for solid-state radiation detectors due to their tunable optoelectronic properties and low-cost single-crystal growth. In this study, CsPbBr₃ single crystals were grown via the Bridgman method and characterized for both alpha and gamma radiation detection. The crystals were examined using temperature-dependent and time-resolved photoluminescence (TRPL), SEM, TEM, and UV-Vis spectroscopy to evaluate defect states, morphology, and carrier recombination. Electrical transport measurements were performed using the van der Pauw and transmission-line methods to determine resistivity, mobility, and contact resistance. Initial devices were fabricated and tested under alpha-particle irradiation to evaluate charge transport and recombination pathways prior to gamma-ray exposure. These results provide insight into optimizing halide perovskites for next-generation scintillation and direct-conversion radiation detectors.