Searching for Light Dark Matter with Narrow-Gap Semiconductors: The SPLENDOR Experiment

The Search for Particles of Light Dark Matter Using Narrow-Gap Semiconductors (SPLENDOR) is a cross-discipline collaboration focused on developing narrow-gap semiconductors to search for Sub-GeV dark matter. SPLENDOR has developed a novel modular detector system that offers adaptability to incorporate newly developed semiconducting materials into an experimental package with two-stage HEMT charge readout technology. SPLENDOR utilizes an ~800 mg crystalline, ~60 meV bandgap sample of Eu₅In₂Sb₆ synthesized by SPLENDOR collaborators at Los Alamos National Laboratory. In parallel with synthesizing this narrow-gap semiconductor, SPLENDOR has developed a cryogenic charge amplifier with a resolution of 20 ± 7 electrons that should approach single electron energy resolution in the coming year. This talk will provide an update on SPLENDOR’s recent progress, highlighting our efforts in amplifier calibration and outlining the next steps and future technologies.