Real-time Color Center Spin Texture Engineering in Semiconductors: In-Situ Diagnostics via Petawatt Laser-Driven Ion Processing

We demonstrate advanced single-step defect-based qubit fabrication using petawatt laser-driven ion acceleration that unifies implantation, annealing, and real-time diagnostics at PHELIX (GSI) and TITAN (LLNL) facilities. This approach generates intense, high-energy ion pulses enabling controllable color center creation through simultaneous defect formation and transient thermal annealing within nanoseconds [1]. Our unified laser-ion method efficiently creates high-density nitrogen-vacancy (NV) centers with enhanced dipole-dipole coupling in diamond, enabling 2D sheet spin textures [2]. This approach applies to creating spin-photon defect centers in silicon and SiC [3]. In-situ diagnostics combine Thomson Parabola spectrometry for ion identification with streak camera detection of picosecond-resolved thermal dynamics and defect formation signatures. This integrated approach establishes direct correlations between ion parameters and defect qubit yield, enabling shot-to-shot fabrication optimization for quantum information applications.