Field-effect Transport Properties of Monolayer WSe<sub>2</sub> using Nb-doped WSe<sub>2</sub> as Source and Drain

ORAL

Abstract

Realizing low-resistance electrical contacts to 2D semiconductors is significant for exploring their exotic quantum phenomena. Here, we present a monolayer WSe2 field-effect transistor using Nb-doped WSe2 as source and drain contacts which replace the more commonly used evaporated metal contacts. The Nb-doped WSe2 bulk crystals with nominal doping concentrations between 0.1% and 5% are grown via chemical vapor transport. The Nb-doped WSe2 bulk crystals are subsequently exfoliated in flakes with thicknesses between 20 to 30 nm, and the sheet carrier densities are determined by room temperature Hall measurements. The transport properties of our devices show a clear p-type field-effect behavior, which indicates the formation of an effective contact interface between the Nb-doped WSe2 and the intrinsic WSe2 layers.

*The work at The University of Texas at Austin was supported by the National Science Foundation (NSF) Grants No. MRSEC DMR-2308817 and No. ECCS-2122476, Army Research Office under Grant No. W911NF-22-1-2, and the Welch Foundation Grant No. F-2169-20230405.

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Presenters

  • Kristopher W Hatch

    • Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

Authors

  • Kristopher W Hatch

    • Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

  • Taeran Lee

    • University of Texas at Austin
    • Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

  • Emanuel Tutuc

    • University of Texas at Austin
    • Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

  • Yeshiyuan Zhou

    • Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA

  • Hongze Li

    • University of Texas at Austin
    • The University of Texas at Austin
    • Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA

  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan

  • Takashi Taniguchi

    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan

  • Keiji Ueno

    • Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

  • Jianshi Zhou

    • University of Texas at Austin
    • Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA

  • Arjun Bala-Mehta

    • Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA