Traveling-solvent crystal growth within a double-crucible Bridgman furnace
ORAL
Abstract
Yingdong Guan1, Suguru Yoshida2, Jairo Obando-Guevara1, Soumi Mondal1, Seng Huat Lee1,2, Heike Pfau1, and Zhiqiang Mao1,2*
1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
22D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Precise stoichiometry control in single-crystal growth is essential for both technological applications and fundamental studies. Conventional flux and Bridgman methods often suffer from non-stoichiometry and compositional gradients, especially in non-congruent melting systems. Even for congruent systems such as Bi2Se3, intrinsic Se vacancies can drastically increase bulk conductivity, obscuring its topological surface states. In this talk, we will present the double-crucible vertical Bridgman (DCVB) method—a novel technique that, for the first time, enables traveling-solvent growth within a Bridgman furnace [1]. Through continuous source feeding, liquid encapsulation, and high-pressure control, DCVB achieves superior stoichiometric precision. Using Bi2Se3 as a model system, we demonstrate crystals with carrier concentrations reduced by one to two orders of magnitude compared to those grown by conventional Bridgman methods. The DCVB method offers a powerful route for producing large, high-purity crystals, particularly for complex metal chalcogenides and pnictides with non-congruent-melting behavior.
This work was supported by the U.S. Department of Energy (DE-SC0019068) and by the Penn State 2DCC-MIP under NSF Cooperative Agreement DMR-2039351.
1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
22D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Precise stoichiometry control in single-crystal growth is essential for both technological applications and fundamental studies. Conventional flux and Bridgman methods often suffer from non-stoichiometry and compositional gradients, especially in non-congruent melting systems. Even for congruent systems such as Bi2Se3, intrinsic Se vacancies can drastically increase bulk conductivity, obscuring its topological surface states. In this talk, we will present the double-crucible vertical Bridgman (DCVB) method—a novel technique that, for the first time, enables traveling-solvent growth within a Bridgman furnace [1]. Through continuous source feeding, liquid encapsulation, and high-pressure control, DCVB achieves superior stoichiometric precision. Using Bi2Se3 as a model system, we demonstrate crystals with carrier concentrations reduced by one to two orders of magnitude compared to those grown by conventional Bridgman methods. The DCVB method offers a powerful route for producing large, high-purity crystals, particularly for complex metal chalcogenides and pnictides with non-congruent-melting behavior.
This work was supported by the U.S. Department of Energy (DE-SC0019068) and by the Penn State 2DCC-MIP under NSF Cooperative Agreement DMR-2039351.
[1] Guan, Yingdong, et al. "Double-Crucible Vertical Bridgman Technique for Stoichiometry-Controlled Chalcogenide Crystal Growth." Crystal Growth & Design (2025).
*This work was supported by the U.S. Department of Energy (DE-SC0019068) and by the Penn State 2DCC-MIP under NSF Cooperative Agreement DMR-2039351.
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Publication: Guan, Yingdong, et al. "Double-Crucible Vertical Bridgman Technique for Stoichiometry-Controlled Chalcogenide Crystal Growth." Crystal Growth & Design (2025).
Presenters
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Yingdong Guan
- The Pennsylvania State University
- Pennsylvania State University