The Observation of Anomalous Hall Effect and Planar Hall Effect in A Novel Semiconductor CuTlS

Topological transport phenomena, such as the anomalous Hall effect (AHE) and planar Hall effect (PHE), have traditionally been observed in magnetic or topological materials, where Berry curvature governs carrier dynamics. Here, we report the observation of intrinsic AHE and PHE in the nonmagnetic van der Waals (vdW) semiconductor CuTlS. By electrostatically tuning the Fermi level via an ionic field-effect transistor (iFET), we uncover a transition from conventional to anomalous Hall behavior, with saturation of Hall resistivity and the emergence of linear magnetoresistance, indicative of nonzero Berry curvature near the valence band edge. A pronounced non-monotonic temperature dependence of AHE, correlated with thermally activated hole transport, confirms its topological origin. Additionally, we observe robust planar Hall and angular magnetoresistance signatures up to 150 K, which are strongly amplified when the Fermi level is tuned into the gap, achieving a record-high PHE magnitude of 168 mΩ·cm at 7 T. Power-law scaling behavior with exponent β ≈ 2 aligns with predictions from Weyl semimetal theory. These results establish CuTlS as a rare example of a nonmagnetic 2D semiconductor hosting strong Berry curvature-driven Hall responses, expanding the landscape of quantum transport beyond magnetically ordered or topologically nontrivial systems.