Dual mode moiré ferroelectricity for hybrid and reconfigurable in-memory computing

2D moiré materials have proved a fruitful platform for realizing new phases of matter as well as phases with manifestations distinct from their 3D counterparts. Ferroelectricity in stacking engineered 2D structures is a salient example, where an interlayer sliding based ferroelectricity and a moiré related unconventional ferroelectricity have been discovered. Here, the two types of ferroelectricity are combined in the same device for new functionalities. Such a device combines both digital and analog computing as well as memory functionality without the need for circuitry change, thus presenting itself as a unique and powerful candidate for reconfigurable and hybrid in-memory computing. In addition, the ultrafast switching, low energy consumption, high endurance, deterministic programming inherent to 2D ferroelectricity makes them promising alternatives to current memristor and other in-memory computing material platforms.