Gap opening of image potential state on reconstructed Ir(001) surface

ORAL

Abstract

Image potential states (IPS) for the unreconstructed Ir⁡(001)−(1×1) and the reconstructed Ir⁡(001)−(5×1) surfaces are investigated by using two-photon photoemission (2PPE) spectroscopy. The Ir⁡(001)−(5×1) reconstructed surface covered by Xe adatoms exhibits a bandgap of 100 meV, which arises from the new periodic potential created by the reconstruction. Meanwhile, no band gap is observed on the unreconstructed Ir⁡(001)−(1×1) surface within a similar momentum range, meaning that the bandgap essentially originates from the surface reconstruction. Further investigation by the planar-averaged charge density distributions of the IPS for both surfaces shows that Xe adsorption does not significantly alter the positions of charge density maxima. It rationalizes why the band gap arising from the substrate superlattice potential does not change significantly upon Xe adsorption. The good agreement between the 2PPE experiments and the theoretical calculations highlights the robustness of IPS behavior under Xe adsorption.

*This work was financially supported by JSPS KAKENHI (Grant No. 22H01960) and the World Premier International Research Center Initiative (WPI) on Materials Nanoarchitectonics, MEXT, Japan. It is also partially supported by the National Science and Technology Council, Taiwan under NSTC 114–2923-M-A49-001-MY2, NSTC 113–2124-M-A49-007, NSTC 113–2628-M-A49-006-MY3, and NSTC T-Star Center Project: Future Semiconductor Technology Research Center under NSTC 114–2634-F-A49-001.

Presenters

  • Chun-Liang Lin

    • National Yang Ming Chiao Tung University

Authors

  • Pratyay Amrit

    • National Yang Ming Chiao Tung University,
  • Naoya Kawakami

    • National Yang Ming Chiao Tung University
  • Noriaki Takagi

    • Kyoto University
  • Hiroshi Ishida

    • Nihon University - Tokyo
  • Chun-Liang Lin

    • National Yang Ming Chiao Tung University
  • Ryuichi Arafune

    • NIMS