Two-dimensional Semiconductor Devices on Diamond for Quantum Sensing

Diamond offers an exceptional platform for next-generation quantum and high-power electronics due to its ultrawide band gap, high thermal conductivity, and nitrogen–vacancy (NV) spin qubits. The integration of two-dimensional (2D) materials with diamond offers new possibilities for quantum technologies. 2D semiconductors such as MoS₂, combined with diamond, can open new routes to coupling excitonic and spin-based quantum sensing functionalities. However, realizing device-quality, wafer-compatible 2D layer requires moving beyond small, exfoliated flakes to direct growth on functional substrates such as diamond, which is a challenge. Here, we will introduce a selective growth of MoS₂ on single-crystal diamond using a lithography-free, confined-space chemical vapor deposition (CVD) process that controls vapor transport to suppress secondary nucleation. Raman and X-ray photoelectron spectroscopies confirm high crystallinity and near-stoichiometry. Field-effect transistors (FETs) of MoS₂ on diamond display gate-tunable conduction with high on/off ratio. Our proof-of-principle demonstration shows a scalable route toward integrated platforms for low-power electronics, spintronic devices, quantum sensing, and optoelectronics, and a key step toward integrating diamond technology with 2D semiconductors.