Tuning the Berry curvature dipole in the non-centrosymmetric materials MM'Te4

Nonlinear Hall effects in non-centrosymmetric Weyl semimetals arise from the Berry curvature dipole (BCD), offering an avenue to understand the topological properties of these materials. In this work, we investigate the transport properties of high-quality single crystals and fabricated devices of Weyl semimetals in the MM′Te₄ family (M = Ta, Nb; M′ = Ir, Rh), Some materials in this family are predicted to have large band gaps which could means that these topological properties could be more robust and thus sustain at room temperature. Structural and compositional analyses (EDS, Raman, TEM) confirm successfully grown phase-pure samples of the crystals. Low-temperature transport measurements reveal voltage responses consistent with a nonlinear Hall effect originating from a BCD, and possibly higher-order multipoles. Ongoing measurements explore angular and material thickness dependence to understand the contributions of the Berry curvature dipole and quadrupole. These results establish MM′Te₄ as a promising platform for exploring the Berry curvature–driven transport in non-centrosymmetric topological materials.