Full Hubbard-U corrections on electron-phonon coupling of strongly correlated materials via the finite displacement method

Oral-In-person  · Withdrawn

Abstract

 The interplay between electron-electron and electron-phonon interactions is a central topic in condensed matter physics. Although the density functional theory plus Hubbard U correction (DFT+U) method is widely used to study electronic structures of strongly correlated materials, its extension to electron-phonon coupling (EPC) matrix and EPC calculations has received limited attention. Here, we implement an algorithm that integrates the DFT+U method and finite-displacement method for phonon and EPC matrix calculations. We obtain full Hubbard U corrections not only applied on electronic and phonon band structures, but more importantly also on EPC matrix. We demonstrate our algorithm in two prototypical correlated materials: infinite-layer nickelates La1-xSrxNiO2 and ruthenium dioxide RuO2. We find that i) while the Hubbard U corrections weakly increase the EPC of La1-xSrxNiO2, its total EPC remains small and insufficient to account for the observed superconducting transition temperature Tc of about 10-30 K. Our result contrasts with the recent work (Phys. Rev. Lett. 133, 126401) showing that the full GW corrections yield an elevated EPC of La1-xSrxNiO2 five times larger than its DFT value. ii) The Hubbard U corrections remove the imaginary phonon modes of RuO2 when strained on TiO2 substrate and substantially reduce its EPC. Our result alleviates the discrepancy between the previously obtained large theoretical EPC and the low experimental Tc. In both examples, we highlight that since correlation corrections (Hubbard U, GW, hybrid functional etc.) easily tune the shape of Fermi surface, accurate EPC calculations must be performed based on a realistic Fermi surface that is consistent with experimental observations.

Presenters

  • Jiale Chen

    • China

Authors

  • Jiale Chen

    • China
  • Youyou Tu

  • Chengliang Xia

    • NYU Shanghai
  • Qijing Zheng

  • Jin Zhao

    • University of Science and Technology of China
  • Hanghui Chen

    • New York University (NYU)