Interfacial Magnetoelectric Transport in graphene via a van der Waals Multiferroic

Electric and magnetic control of transport properties at atomic

interfaces is central to the development of next-generation electronics

and spintronics. Van der Waals multiferroics—materials that

simultaneously host dielectric and magnetic orders down to the

monolayer limit—offer a promising platform for such interfacial control,

yet the realization of electronic functionalities that exploit the unique

attributes of van der Waals multiferroics remains largely elusive.

Here, we realize a van der Waals heterostructure comprising graphene

and a van der Waals multiferroic, enabling gate-switchable

magnetoelectric transport in graphene mediated by the multiferroic

layer. The charge-neutrality resistance peak of graphene exhibits

pronounced hysteresis arising from polarization flip in the multiferroic

state. Application of an in-plane magnetic field shifts this peak in a

polarization-dependent manner, revealing magnetic-field-induced

polarization modulation—a direct signature of the magnetoelectric

effect. Furthermore, cooling the device under an applied electric field

enables domain control of the multiferroic order, allowing reversible

switching of the interfacial magnetoelectric transport.