Stacking-Dependent Excitonic Reponses in Twisted 2D Magnet  

ORAL

Abstract

CrSBr, a layered two-dimensional (2D) antiferromagnetic semiconductor, exhibits a rich phase diagram that has complicated the exploration of its moiré and stacking-dependent properties. To address this challenge, we systematically investigated the excitonic responses of CrSBr thin flakes with varying stacking configurations. Our results reveal distinct excitonic transitions arising from different stacking orders, each showing unique spectral and polarization behaviors. By analyzing the interplay between interlayer and intralayer excitons, we identify how stacking geometry governs their coupling strength and energy shifts. Additionally, we uncover contrasting excitonic responses between in-plane and out-of-plane arrangements, highlighting the critical role of spin canting in exciton formation and dynamics. This tunable excitonic behavior positions CrSBr as a promising platform for spin–exciton coupling studies and for developing next-generation optoelectronic and spintronic devices.

Presenters

  • Guoxing Wang

    • Washington university in st.louis

Authors

  • Guoxing Wang

    • Washington university in st.louis
  • Yuliang Yang

    • Washington University, St. Louis
  • Xi Wang

    • Washington University in St. Louis
    • Washington University in st.louis
  • Kaixuan Zhang

    • Seoul National University
    • Washington University in st.louis