Predictive many-body theory of carrier mobility from first principles

Carrier mobility is the key property that governs how current flows in semiconductors. Here, we present a predictive microscopic theory of carrier mobility that goes beyond existing approaches by treating electron-phonon interactions at the many-body level within GW perturbation theory. The method achieves unprecedented agreement with measurements on high-purity samples of prototypical semiconductors. We disentangle the roles of many-body corrections to band dispersion and the electron--phonon vertex, enabling a systematic assessment of the limitations of different approximations in mobility calculations. This framework establishes a new benchmark for predictive accuracy in carrier transport simulations.