Magnetoresistance of Zirconium Oxynitride Thin Films at Ultra Low Temperatures and High Magnetic Fields

Zirconium Oxynitride thin films have important applications such as cryogenic temperature sensors and magnetic field detectors. Magnetoresistance intrinsic to a temperature sensor can result in challenges, as the measured temperature is based on the principle of electrical resistance. Exposure to a magnetic field often results in an offset in temperature standards. Characterization of these materials is essential for ensuring accuracy of temperature measurements and in the use of thermometry standards. Variations in stoichiometry and film thickness due to the differences in fabrication process and operational characteristics results in potentially unique transport properties and response behaviors of these materials [1, 2]. It is important to understand the behavior of these materials in extreme environments. We study the impact of high magnetic fields and low temperatures on the electrical properties of Zirconium Oxynitride thin films. We report on magnetoresistance of these sensors in the millikelvin temperature regiment and high magnetic fields. This information is important, revealing fundamental material properties and for optimizing sensor design for specific applications.



[1] Li, Yanjie, et al. "Tunable sensitivity of zirconium oxynitride thin-film temperature sensor modulated by film thickness." Journal of Materials Science: Materials in Electronics 33.26 (2022): 20940-20952.

[2] Mitra, Souradeep, et al. "Exploring Conduction Mechanism of Zirconium Oxy-Nitride Thin Films at Low Temperatures." Available at SSRN 5375031.