Sharp defect-induced emission peaks in vanadium doped WSe<sub>2</sub>
ORAL
Abstract
The availability of optically-active quantum defects is one of the building blocks towards quantum information science applications. Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDs) emerge as a promising platform to host such quantum defects owing to their intrinsic quantum confinement, long expected spin coherence time and strong spin-orbit coupling (SOC). Vanadium doped WSe2 has been studied for its long-ranged magnetic behaviors and exhibits promising emission signatures for quantum technologies. In this work, we examine the emission peaks in V-doped WSe2 and its magnetic field response through experimental characterization and use first-principles computations to provide insight for their origins.
*U.S. Department of Energy, Office of Science, Basic Energy Sciences in Quantum Information Science under Award Number DE-SC0022289 National Energy Research Scientific Computing Center under Contract No. DE-AC02-05CH11231
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Presenters
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Weiru Chen
- Dartmouth College