Sharp defect-induced emission peaks in vanadium doped WSe<sub>2</sub>

Oral-In-person

Abstract



The availability of optically-active quantum defects is one of the building blocks towards quantum information science applications. Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDs) emerge as a promising platform to host such quantum defects owing to their intrinsic quantum confinement, long expected spin coherence time and strong spin-orbit coupling (SOC). Vanadium doped WSe2 has been studied for its long-ranged magnetic behaviors and exhibits promising emission signatures for quantum technologies. In this work, we examine the emission peaks in V-doped WSe2 and its magnetic field response through experimental characterization and use first-principles computations to provide insight for their origins.

Presenters

  • Weiru Chen

    • Dartmouth College

Authors

  • Weiru Chen

    • Dartmouth College
  • Yihuang Xiong

    • Dartmouth College
  • Elyse Barre

    • Lawrence Berkeley National Laboratory
  • Daria Blach

  • Garima Gupta

  • Leyi Loh

  • Chen Yuan

  • Kenji Watanabe

    • National Institute for Materials Science
  • Takashi Taniguchi

    • National Institute for Materials Science
  • Eda Goki

  • Archana Raja

    • Lawrence Berkeley National Laboratory
  • Geoffroy Hautier

    • Dartmouth College