Fabrication and Magnetoresistance Characterization of Twisted CrSBr in Antiferromagnetic Tunnel Junctions

Antiferromagnetic magnetic tunnel junctions (AF-MTJ) represent the next generation of spintronic devices due to their high coupling strength. AF-MTJs offer key advantages, including resistance to stray magnetic fields, ultrafast dynamics, and higher operation frequencies as compared to traditional ferromagnet MTJs. A material of particular interest is the two-dimensional magnetic semiconductor, CrSBr; its strong triaxial anisotropy and robust interlayer antiferromagnetic coupling down to the bilayer limit provide an ideal platform to explore AF-MTJs in the twisted regime. In this talk, we present the fabrication methods and electrical characterization of twisted CrSBr MTJs to investigate the twist angle dependence of tunneling magnetoresistance. Through the use of the stack-and-tear method, mechanical cutting, and atomic force microscopy etching, we create controlled twist geometries between CrSBr layers. Spin-filter tunneling magnetoresistance measurements will then be employed to sensitively probe the spin canting, providing direct experimental access to how twist angle governs interlayer exchange coupling, domain formation, and spin-dependent tunneling in anisotropic 2D antiferromagnets.