Quantum Hall Effect on Commercial Graphene Devices: Toward Scalable Quantum Technology Applications

We experimentally investigated the quantum Hall effect (QHE) in commercially manufactured large-area graphene transistors to evaluate whether industrially fabricated devices preserve the intrinsic quantum transport properties of graphene. Clear integer QHE plateaus (ν = ±2, ±6, ±10) were observed using a two-terminal setup, demonstrating that high carrier mobility and uniform electronic quality are maintained even in mass-produced transistors.

Beyond confirming the robustness of QHE, we further explored edge transport by deliberately modifying one boundary of the graphene channel through focused ion beam (FIB). Under quantized status of graphene, where charge carriers propagate along the edges, the engineered boundary induced distinct deviations from conventional conductance plateaus. These observations indicate that purposeful edge engineering can reshape QHE characteristics, enabling new forms of quantized transport behavior.

Taken together, these results show that clear QHE can be achieved without specialized fabrication, and that additional functionalities can be introduced with intentional edge engineering. Our findings underscore both the reliability of commercially available graphene transistors for precision quantum measurements and their potential as scalable building blocks for engineered quantum electronic devices and future quantum technologies.