Gate-Induced Structural Switching in Twisted Double Bilayer Graphene

The interlayer stacking order of few-layered two-dimensional (2D) materials enables the observation of a variety of exotic electronic phases. In graphene, the rhombohedral stacking configuration hosts a multitude of correlated phenomena that are not present in the conventional Bernal phase. Introducing a small twist angle between few-layer graphene layers gives rise to coexisting rhombohedral and Bernal domains. We observe a gate-tunable interlayer sliding phase transition between Bernal and rhombohedral stacking orders in tetralayer graphene. The structural phase transition between the graphene stacking orders is probed through low-temperature electronic transport measurements and elucidated in a gate-voltage phase diagram. Interlayer sliding of this system enables the electrically tunable non-volatile switching between a paramagnetic and ferromagnetic phase. This phase transition is realized alongside an anomalous Hall effect exhibiting inversion symmetry breaking under opposite displacement fields. These results call for the exploration of electrostatically controllable structural switching of few-layered 2D materials, and the emergent phenomena in systems with various distinct domain structures.