Band Structure of GeSn alloys probed by ARPES

Oral-In-person

Abstract

Ge1-xSnx alloys offers a pathway to engineer direct band gaps within group-IV semiconductors; however, their intrinsic electronic structure remains underexplored. We employ polarization-dependent angle-resolved photoemission spectroscopy (ARPES) to probe the strain- and compositional-driven valence band modifications in epitaxial Ge1-xSnx (x = 0, 0.05, 0.10) films grown by molecular beam epitaxy. Core-level XPS confirms uniform Sn incorporation into the Ge lattice. With increasing Sn doping content, ARPES reveals enhanced spin-orbit splitting. ARPES matrix element effects disentangle heavy-hole and light-hole bands and point to the lift of degeneracy due to biaxial compressive strain.

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Presenters

  • Ram Joshi

    • University of Arkansas

Authors

  • Ram Joshi

    • University of Arkansas

  • Ethan Favorite

  • Seth Williams

  • Dinesh Baral

  • Nirosh Eldose

  • Makoto Hashimoto

    • SLAC National Accelerator Laboratory

  • Aaron Bostwick

  • Christopher Jozwiak

  • Eli Rotenberg

    • Lawrence Berkeley National Laboratory

  • Gregory Salamo

  • Jifeng Liu

  • Shui-Qing Yu

  • Philipp Rosenzweig

  • Hiroyuki Nakamura

    • University of Arkansas