Band Structure of GeSn alloys probed by ARPES

ORAL

Abstract

Ge1-xSnx alloys offers a pathway to engineer direct band gaps within group-IV semiconductors; however, their intrinsic electronic structure remains underexplored. We employ polarization-dependent angle-resolved photoemission spectroscopy (ARPES) to probe the strain- and compositional-driven valence band modifications in epitaxial Ge1-xSnx (x = 0, 0.05, 0.10) films grown by molecular beam epitaxy. Core-level XPS confirms uniform Sn incorporation into the Ge lattice. With increasing Sn doping content, ARPES reveals enhanced spin-orbit splitting. ARPES matrix element effects disentangle heavy-hole and light-hole bands and point to the lift of degeneracy due to biaxial compressive strain.

*This work was supported as part of μ-ATOMS, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award DE-SC0023412.

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Presenters

  • Ram D Joshi

    • University of Arkansas

Authors

  • Ram D Joshi

    • University of Arkansas

  • Ethan J Favorite

    • University of Arkansas

  • Seth Williams

    • University of Arkansas

  • Dinesh Baral

    • University of Arkansas

  • Nirosh M Eldose

    • University of Arkansas

  • Makoto Hashimoto

    • SLAC National Accelerator Laboratory

  • Aaron Bostwick

    • Lawrence Berkeley National Lab Advanced Light Source
    • Lawrence Berkeley National Laboratory
    • LBNL
    • Advanced Light Source
    • Lawrence Berkeley National Lab

  • Christopher Jozwiak

    • Lawrence Berkeley National Lab Advanced Light Source
    • Lawrence Berkeley National Laboratory
    • LBNL
    • Advanced Light Source
    • Lawrence Berkeley National Lab

  • Eli Rotenberg

    • Lawrence Berkeley National Laboratory

  • Gregory J Salamo

    • University of Arkansas

  • Jifeng Liu

    • Dartmouth College
    • Materials Science and Engineering,Thayer School of Engineering, Dartmouth College

  • Shui-Qing Yu

    • University of Arkansas

  • Philipp Rosenzweig

    • Physikalisches Institut, Universität Stuttgart,

  • Hiro Nakamura

    • University of Arkansas