Bringing Synchrotron-Level HAXPES to the Lab: DeepCore-X for Buried Interface Characterization

Buried interfaces in multilayer semiconductor devices – such as MOSFETs, solar cells, and memory architectures – critically impact performance and reliability. Conventional surface-sensitive techniques like XPS struggle to probe these interfaces without destructive preparation. High energy XPS (HAXPES), with greater information depth, enables non-destructive analysis of buried layers. We introduce DeepCore-X, a next-generation lab instrument combining soft and hard XPS in one system, delivering synchrotron-like performance. Powered by a Ga Kα MetalJet source (9.25 keV), it offers a 3.5× intensity boost and 1000 W continuous operation. With a monochromator and 50 µm spot size, DeepCore-X enables high-resolution probing of interfaces up to 50 nm deep – without sputtering. The integrated EW4000 analyzer provides 60° wide-angle detection, supporting high-throughput measurements across complex stacks. Automated sample handling, multi-point acquisition, and operando bias capabilities make it ideal for evaluating band bending, trap states, and chemical shifts. We will present application examples, including non-destructive depth profiling, to demonstrate how DeepCore-X bridges the gap between surface analysis and full device stack characterization – without requiring synchrotron access.