Anomalous Impurity-Induced Charge Modulations in Black Phosphorus

ORAL

Abstract

We use scanning tunneling microscopy to investigate charge modulations induced by ionized indium impurities on the surface of black phosphorus. When individual impurities are switched into a negatively charged state by the STM tip, periodic charge modulations emerge around the impurity center and are strictly confined by the nanoscale impurity potential. The resulting patterns form a distorted triangular lattice whose periodicity remains unchanged over a wide range of positive bias. Notably, the anisotropy of these local charge modulations is opposite to that expected from the anisotropic Fermi surface of black phosphorus, ruling out a simple band-structure-based interpretation. These results demonstrate that impurity engineering enables the creation and manipulation of localized charge-ordered states in low-dimensional semiconductors.

*B. L. was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (No. RS-2023-00251265, RS-2024-00337267, and RS-2024-00442483) and the Industry-Academy joint research program between Samsung Electronics and Yonsei University.

Presenters

  • Byeongin Lee

    • Yonsei University

Authors

  • Byeongin Lee

    • Yonsei University
  • Junho Bang

    • Yonsei University
  • João A Sobral

    • University of Stuttgart
  • Sayan Banerjee

    • University of Stuttgart
  • Young Woo Choi

    • Sogang University
  • Claudia Felser

    • Max Planck Institute for Chemical Physics of Solids
  • Mathias S Scheurer

    • University of Stuttgart
  • Jian-Feng Ge

    • Max Planck Institute for Chemical Physics of Solids
  • Doohee Cho

    • Yonsei University