Ubiquitous Matthiessen rule violation in hole-doped iron-based superconductor Ba<sub>1-x</sub>K<sub>x</sub>Fe<sub>2</sub>As<sub>2</sub> with controlled disorder

Oral-In-person

Abstract

Systematic evolution of the temperature dependent electrical resistivity with doping is one of the hallmarks of magnetically mediated mechanism of superconductivity [1]. 

While in electron doped and iso-electron-substituted BaFe2As2 resistivity turns into T-linear at optimum doping, it shows a pronounced non-linear feature in the hole-doped

Ba1-xKxFe2As2

Here we report the evolution of the temperature-dependent electrical resistivity, ρ(T), of Ba1-xKxFe2As2 with artificial disorder induced by low temperature electron irradiation.   Measurements were made for the composition range 0.22≤ x ≤ 1. We find ubiquitous violation of the Matthiessen rule, correlating with a crossover feature in  ρ(T) at T* ∽200~K. The increased sensitivity to disorder at low temperatures is consistent with dominant contribution of low-density high mobility carriers, as suggested by anomalously large and temperature-dependent Hall effect in these compounds. Possible origins of this scenario will be discussed. 

[1] N.D. Mathur et al.  Nature (London) 394, 39 (1998).

Presenters

  • Makariy Tanatar

    • Ames National Laboratory

Authors

  • Makariy Tanatar

    • Ames National Laboratory
  • Marcin Konczykowski

    • Ecole Polytechnique
  • Romain Grasset

  • Yong Liu

  • Thomas A. Lograsso

  • Ruslan Prozorov

    • Ames National Laboratory